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1 Ergebnisse
1
Interface and electrical properties of buried InGaAs channe..:
Li, Yue
;
Chen, Yonghe
;
Sun, Tangyou
...
Applied Physics Express. 13 (2019) 1 - p. 011004 , 2019
Link:
https://doi.org/10.7567/1882-0786/ab5acf
RT Journal T1
Interface and electrical properties of buried InGaAs channel MOSFET with an InP barrier layer and Al2O3/HfO2/Al2O3 gate dielectrics
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_1882-0786_ab5acf&Exemplar=1&LAN=DE A1 Li, Yue A1 Chen, Yonghe A1 Sun, Tangyou A1 Zhang, Fabi A1 Cao, Mingmin A1 Li, Qi A1 Fu, Tao A1 Xiao, Gongli A1 Liu, Yingbo A1 Liu, Honggang A1 Li, Haiou PB IOP Publishing YR 2019 SN 1882-0778 SN 1882-0786 JF Applied Physics Express VO 13 IS 1 SP 011004 LK http://dx.doi.org/https://doi.org/10.7567/1882-0786/ab5acf DO https://doi.org/10.7567/1882-0786/ab5acf SF ELIB - SuUB Bremen
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