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1 Ergebnisse
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Characterization of traps at nitrided SiO2/SiC interfaces n..:
Hatakeyama, Tetsuo
;
Kiuchi, Yuji
;
Sometani, Mitsuru
...
Applied Physics Express. 10 (2017) 4 - p. 046601 , 2017
Link:
https://doi.org/10.7567/apex.10.046601
RT Journal T1
Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_apex.10.046601&Exemplar=1&LAN=DE A1 Hatakeyama, Tetsuo A1 Kiuchi, Yuji A1 Sometani, Mitsuru A1 Harada, Shinsuke A1 Okamoto, Dai A1 Yano, Hiroshi A1 Yonezawa, Yoshiyuki A1 Okumura, Hajime PB IOP Publishing YR 2017 SN 1882-0778 SN 1882-0786 JF Applied Physics Express VO 10 IS 4 SP 046601 LK http://dx.doi.org/https://doi.org/10.7567/apex.10.046601 DO https://doi.org/10.7567/apex.10.046601 SF ELIB - SuUB Bremen
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