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1 Ergebnisse
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Effect of charge quantity on conduction mechanism of high- ..:
Wu, Cheng-Hsien
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
...
Applied Physics Express. 10 (2017) 5 - p. 054101 , 2017
Link:
https://doi.org/10.7567/apex.10.054101
RT Journal T1
Effect of charge quantity on conduction mechanism of high- and low-resistance states during forming process in a one-transistor–one-resistor resistance random access memory
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_apex.10.054101&Exemplar=1&LAN=DE A1 Wu, Cheng-Hsien A1 Chang, Ting-Chang A1 Tsai, Tsung-Ming A1 Chang, Kuan-Chang A1 Chu, Tian-Jian A1 Pan, Chih-Hung A1 Su, Yu-Ting A1 Chen, Po-Hsun A1 Lin, Shih-Kai A1 Hu, Shih-Jie A1 Sze, Simon M. PB IOP Publishing YR 2017 SN 1882-0778 SN 1882-0786 JF Applied Physics Express VO 10 IS 5 SP 054101 LK http://dx.doi.org/https://doi.org/10.7567/apex.10.054101 DO https://doi.org/10.7567/apex.10.054101 SF ELIB - SuUB Bremen
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