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1 Ergebnisse
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High carrier activation of Mg ion-implanted GaN by conventi..:
Niwa, Takaki
;
Fujii, Takahiro
;
Oka, Tohru
Applied Physics Express. 10 (2017) 9 - p. 091002 , 2017
Link:
https://doi.org/10.7567/apex.10.091002
RT Journal T1
High carrier activation of Mg ion-implanted GaN by conventional rapid thermal annealing
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_apex.10.091002&Exemplar=1&LAN=DE A1 Niwa, Takaki A1 Fujii, Takahiro A1 Oka, Tohru PB IOP Publishing YR 2017 SN 1882-0778 SN 1882-0786 JF Applied Physics Express VO 10 IS 9 SP 091002 LK http://dx.doi.org/https://doi.org/10.7567/apex.10.091002 DO https://doi.org/10.7567/apex.10.091002 SF ELIB - SuUB Bremen
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