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A Physics-Based Effective Mobility Model for Polycrystallin..:
Yan, Bing-Hui
;
Li, Bin
;
Yao, Ruo-He
.
Japanese Journal of Applied Physics. 50 (2011) 9R - p. 094302 , 2011
Link:
https://doi.org/10.7567/jjap.50.094302
RT Journal T1 <Title>A Physics-Based Effective Mobility Model for Polycrystalline Silicon Thin Film Transistor Considering Discontinuous Energy Band at Grain Boundaries</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.50.094302&Exemplar=1&LAN=DE A1 Yan, Bing-Hui A1 Li, Bin A1 Yao, Ruo-He A1 Wu, Wei-Jing PB IOP Publishing YR 2011 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 50 IS 9R SP 094302 LK http://dx.doi.org/https://doi.org/10.7567/jjap.50.094302 DO https://doi.org/10.7567/jjap.50.094302 SF ELIB - SuUB Bremen
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