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1 Ergebnisse
1
Effect of La2O3Capping Layer Thickness on Hot-Carrier Degra..:
Kim, Dongwoo
;
Lee, Seonhaeng
;
Kim, Cheolgyu
..
Japanese Journal of Applied Physics. 51 (2012) 2S - p. 02BC10 , 2012
Link:
https://doi.org/10.7567/jjap.51.02bc10
RT Journal T1
Effect of La2O3Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.51.02bc10&Exemplar=1&LAN=DE A1 Kim, Dongwoo A1 Lee, Seonhaeng A1 Kim, Cheolgyu A1 Oh, Taekyung A1 Kang, Bongkoo PB IOP Publishing YR 2012 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 51 IS 2S SP 02BC10 LK http://dx.doi.org/https://doi.org/10.7567/jjap.51.02bc10 DO https://doi.org/10.7567/jjap.51.02bc10 SF ELIB - SuUB Bremen
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