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1 Ergebnisse
1
Ultralow Contact Resistivity for a Metal/p-Type Silicon Int..:
Murakoshi, Atsushi
;
Iwase, Masao
;
Niiyama, Hiromi
..
Japanese Journal of Applied Physics. 52 (2013) 7R - p. 075802 , 2013
Link:
https://doi.org/10.7567/jjap.52.075802
RT Journal T1
Ultralow Contact Resistivity for a Metal/p-Type Silicon Interface by High-Concentration Germanium and Boron Doping Combined with Low-Temperature Annealing
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.52.075802&Exemplar=1&LAN=DE A1 Murakoshi, Atsushi A1 Iwase, Masao A1 Niiyama, Hiromi A1 Koike, Mitsuo A1 Suguro, Kyoichi PB IOP Publishing YR 2013 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 52 IS 7R SP 075802 LK http://dx.doi.org/https://doi.org/10.7567/jjap.52.075802 DO https://doi.org/10.7567/jjap.52.075802 SF ELIB - SuUB Bremen
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