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Electroluminescence Analysis and Simulation of the Effects ..:
Meneghini, Matteo
;
Vaccari, Simone
;
Garbujo, Alessio
...
Japanese Journal of Applied Physics. 52 (2013) 8S - p. 08JG09 , 2013
Link:
https://doi.org/10.7567/jjap.52.08jg09
RT Journal T1
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.52.08jg09&Exemplar=1&LAN=DE A1 Meneghini, Matteo A1 Vaccari, Simone A1 Garbujo, Alessio A1 Trivellin, Nicola A1 Zhu, Dandan A1 Humphreys, Colin J. A1 Calciati, Marco A1 Goano, Michele A1 Bertazzi, Francesco A1 Ghione, Giovanni A1 Bellotti, Enrico A1 Meneghesso, Gaudenzio A1 Zanoni, Enrico PB IOP Publishing YR 2013 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 52 IS 8S SP 08JG09 LK http://dx.doi.org/https://doi.org/10.7567/jjap.52.08jg09 DO https://doi.org/10.7567/jjap.52.08jg09 SF ELIB - SuUB Bremen
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