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1 Ergebnisse
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Thermal and plasma treatments for improved (sub-)1 nm equiv..:
Veloso, Anabela
;
Boccardi, Guillaume
;
Ragnarsson, Lars-Åke
...
Japanese Journal of Applied Physics. 53 (2014) 4S - p. 04EA04 , 2014
Link:
https://doi.org/10.7567/jjap.53.04ea04
RT Journal T1
Thermal and plasma treatments for improved (sub-)1 nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration scheme
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.53.04ea04&Exemplar=1&LAN=DE A1 Veloso, Anabela A1 Boccardi, Guillaume A1 Ragnarsson, Lars-Åke A1 Higuchi, Yuichi A1 Arimura, Hiroaki A1 Lee, Jae Woo A1 Simoen, Eddy A1 Cho, Moon Ju A1 Roussel, Philippe J. A1 Paraschiv, Vasile A1 Shi, Xiaoping A1 Schram, Tom A1 Chew, Soon Aik A1 Brus, Stephan A1 Dangol, Anish A1 Vecchio, Emma A1 Sebaai, Farid A1 Kellens, Kristof A1 Heylen, Nancy A1 Devriendt, Katia A1 Dekkers, Harold A1 Van Ammel, Annemie A1 Witters, Thomas A1 Conard, Thierry A1 Vaesen, Inge A1 Richard, Olivier A1 Bender, Hugo A1 Athimulam, Raja A1 Chiarella, Thomas A1 Thean, Aaron PB IOP Publishing YR 2014 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 53 IS 4S SP 04EA04 LK http://dx.doi.org/https://doi.org/10.7567/jjap.53.04ea04 DO https://doi.org/10.7567/jjap.53.04ea04 SF ELIB - SuUB Bremen
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