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Preparation of free-standing GaN substrates from GaN layers..:
Sochacki, Tomasz
;
Amilusik, Mikolaj
;
Lucznik, Boleslaw
...
Japanese Journal of Applied Physics. 53 (2014) 5S1 - p. 05FA04 , 2014
Link:
https://doi.org/10.7567/jjap.53.05fa04
RT Journal T1
Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.53.05fa04&Exemplar=1&LAN=DE A1 Sochacki, Tomasz A1 Amilusik, Mikolaj A1 Lucznik, Boleslaw A1 Fijalkowski, Michal A1 Weyher, Janusz Ludwik A1 Sadovyi, Bohdan A1 Kamler, Grzegorz A1 Nowak, Grzegorz A1 Litwin-Staszewska, Elzbieta A1 Khachapuridze, Aleksander A1 Grzegory, Izabella A1 Kucharski, Robert A1 Zajac, Marcin A1 Doradzinski, Roman A1 Bockowski, Michal PB IOP Publishing YR 2014 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 53 IS 5S1 SP 05FA04 LK http://dx.doi.org/https://doi.org/10.7567/jjap.53.05fa04 DO https://doi.org/10.7567/jjap.53.05fa04 SF ELIB - SuUB Bremen
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