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Silicon nitride etching performance of CH2F2plasma diluted ..:
Kondo, Yusuke
;
Ishikawa, Kenji
;
Hayashi, Toshio
...
Japanese Journal of Applied Physics. 54 (2015) 4 - p. 040303 , 2015
Link:
https://doi.org/10.7567/jjap.54.040303
RT Journal T1 <Title>Silicon nitride etching performance of CH2F2plasma diluted with argon or krypton</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.54.040303&Exemplar=1&LAN=DE A1 Kondo, Yusuke A1 Ishikawa, Kenji A1 Hayashi, Toshio A1 Miyawaki, Yudai A1 Takeda, Keigo A1 Kondo, Hiroki A1 Sekine, Makoto A1 Hori, Masaru PB IOP Publishing YR 2015 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 54 IS 4 SP 040303 LK http://dx.doi.org/https://doi.org/10.7567/jjap.54.040303 DO https://doi.org/10.7567/jjap.54.040303 SF ELIB - SuUB Bremen
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