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1 Ergebnisse
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Investigation of the threshold voltage drift in enhancement..:
Sang, Fei
;
Wang, Maojun
;
Zhang, Chuan
...
Japanese Journal of Applied Physics. 54 (2015) 4 - p. 044101 , 2015
Link:
https://doi.org/10.7567/jjap.54.044101
RT Journal T1
Investigation of the threshold voltage drift in enhancement mode GaN MOSFET under negative gate bias stress
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.54.044101&Exemplar=1&LAN=DE A1 Sang, Fei A1 Wang, Maojun A1 Zhang, Chuan A1 Tao, Ming A1 Xie, Bing A1 Wen, Cheng P. A1 Wang, Jinyan A1 Hao, Yilong A1 Wu, Wengang A1 Shen, Bo PB IOP Publishing YR 2015 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 54 IS 4 SP 044101 LK http://dx.doi.org/https://doi.org/10.7567/jjap.54.044101 DO https://doi.org/10.7567/jjap.54.044101 SF ELIB - SuUB Bremen
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