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1 Ergebnisse
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Fabrication of dynamic oxide semiconductor random access me..:
Onuki, Tatsuya
;
Kato, Kiyoshi
;
Nomura, Masumi
...
Japanese Journal of Applied Physics. 54 (2015) 4S - p. 04DD07 , 2015
Link:
https://doi.org/10.7567/jjap.54.04dd07
RT Journal T1
Fabrication of dynamic oxide semiconductor random access memory with 3.9 fF storage capacitance and greater than 1 h retention by usingc-axis aligned crystalline oxide semiconductor transistor withLof 60 nm
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.54.04dd07&Exemplar=1&LAN=DE A1 Onuki, Tatsuya A1 Kato, Kiyoshi A1 Nomura, Masumi A1 Yakubo, Yuto A1 Nagatsuka, Shuhei A1 Matsuzaki, Takanori A1 Hondo, Suguru A1 Hata, Yuki A1 Okazaki, Yutaka A1 Nagai, Masaharu A1 Atsumi, Tomoaki A1 Sakakura, Masayuki A1 Okuda, Takashi A1 Yamamoto, Yoshitaka A1 Yamazaki, Shunpei PB IOP Publishing YR 2015 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 54 IS 4S SP 04DD07 LK http://dx.doi.org/https://doi.org/10.7567/jjap.54.04dd07 DO https://doi.org/10.7567/jjap.54.04dd07 SF ELIB - SuUB Bremen
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