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1 Ergebnisse
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Effective surface treatment for GaN metal–insulator–semicon..:
Liu, Shih-Chien
;
Trinh, Hai-Dang
;
Dai, Gu-Ming
...
Japanese Journal of Applied Physics. 55 (2015) 1S - p. 01AD06 , 2015
Link:
https://doi.org/10.7567/jjap.55.01ad06
RT Journal T1
Effective surface treatment for GaN metal–insulator–semiconductor high-electron-mobility transistors using HF plus N2 plasma prior to SiN passivation
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.55.01ad06&Exemplar=1&LAN=DE A1 Liu, Shih-Chien A1 Trinh, Hai-Dang A1 Dai, Gu-Ming A1 Huang, Chung-Kai A1 Dee, Chang-Fu A1 Majlis, Burhanuddin Yeop A1 Biswas, Dhrubes A1 Chang, Edward Yi PB IOP Publishing YR 2015 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 55 IS 1S SP 01AD06 LK http://dx.doi.org/https://doi.org/10.7567/jjap.55.01ad06 DO https://doi.org/10.7567/jjap.55.01ad06 SF ELIB - SuUB Bremen
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