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1 Ergebnisse
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Boron diffusion layer formation using Ge cryogenic implanta..:
Murakoshi, Atsushi
;
Harada, Tsubasa
;
Miyano, Kiyotaka
...
Japanese Journal of Applied Physics. 55 (2016) 4 - p. 046501 , 2016
Link:
https://doi.org/10.7567/jjap.55.046501
RT Journal T1
Boron diffusion layer formation using Ge cryogenic implantation with low-temperature microwave annealing
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.55.046501&Exemplar=1&LAN=DE A1 Murakoshi, Atsushi A1 Harada, Tsubasa A1 Miyano, Kiyotaka A1 Harakawa, Hideaki A1 Aoyama, Tomonori A1 Yamashita, Hirofumi A1 Kohyama, Yusuke PB IOP Publishing YR 2016 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 55 IS 4 SP 046501 LK http://dx.doi.org/https://doi.org/10.7567/jjap.55.046501 DO https://doi.org/10.7567/jjap.55.046501 SF ELIB - SuUB Bremen
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