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1 Ergebnisse
1
Low power switching of Si-doped Ta2O5 resistive random acce..:
Kim, Beom Yong
;
Lee, Kee Jeung
;
Chung, Su Ock
...
Japanese Journal of Applied Physics. 55 (2016) 4S - p. 04EE09 , 2016
Link:
https://doi.org/10.7567/jjap.55.04ee09
RT Journal T1
Low power switching of Si-doped Ta2O5 resistive random access memory for high density memory application
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.55.04ee09&Exemplar=1&LAN=DE A1 Kim, Beom Yong A1 Lee, Kee Jeung A1 Chung, Su Ock A1 Kim, Soo Gil A1 Ko, Young Seok A1 Kim, Hyeong Soo PB IOP Publishing YR 2016 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 55 IS 4S SP 04EE09 LK http://dx.doi.org/https://doi.org/10.7567/jjap.55.04ee09 DO https://doi.org/10.7567/jjap.55.04ee09 SF ELIB - SuUB Bremen
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