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1 Ergebnisse
1
Temperature dependency and reliability of through substrate..:
Chiu, Hsien-Chin
;
Peng, Li-Yi
;
Wang, Hou-Yu
...
Japanese Journal of Applied Physics. 55 (2016) 5 - p. 056502 , 2016
Link:
https://doi.org/10.7567/jjap.55.056502
RT Journal T1
Temperature dependency and reliability of through substrate via InAlN/GaN high electron mobility transistors as determined using low frequency noise measurement
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.55.056502&Exemplar=1&LAN=DE A1 Chiu, Hsien-Chin A1 Peng, Li-Yi A1 Wang, Hou-Yu A1 Wang, Hsiang-Chun A1 Kao, Hsuan-Ling A1 Chien, Feng-Tso A1 Lin, Jia-Ching A1 Chang, Kuo-Jen A1 Cheng, Yi-Cheng PB IOP Publishing YR 2016 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 55 IS 5 SP 056502 LK http://dx.doi.org/https://doi.org/10.7567/jjap.55.056502 DO https://doi.org/10.7567/jjap.55.056502 SF ELIB - SuUB Bremen
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