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Positional dependence of defect distribution in semipolar ..:
Uchiyama, Toshiro
;
Takeuchi, Shotaro
;
Kamada, Shohei
...
Japanese Journal of Applied Physics. 55 (2016) 5S - p. 05FA07 , 2016
Link:
https://doi.org/10.7567/jjap.55.05fa07
RT Journal T1
Positional dependence of defect distribution in semipolar hydride vapor phase epitaxy-GaN films grown on patterned sapphire substrates
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.55.05fa07&Exemplar=1&LAN=DE A1 Uchiyama, Toshiro A1 Takeuchi, Shotaro A1 Kamada, Shohei A1 Arauchi, Takuji A1 Hashimoto, Yasuhiro A1 Yamane, Keisuke A1 Okada, Narihito A1 Imai, Yasuhiko A1 Kimura, Shigeru A1 Tadatomo, Kazuyuki A1 Sakai, Akira PB IOP Publishing YR 2016 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 55 IS 5S SP 05FA07 LK http://dx.doi.org/https://doi.org/10.7567/jjap.55.05fa07 DO https://doi.org/10.7567/jjap.55.05fa07 SF ELIB - SuUB Bremen
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