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1 Ergebnisse
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Growth of silicon-doped Al0.6Ga0.4N with low carbon concent..:
Ikenaga, Kazutada
;
Mishima, Akira
;
Yano, Yoshiki
..
Japanese Journal of Applied Physics. 55 (2016) 5S - p. 05FE04 , 2016
Link:
https://doi.org/10.7567/jjap.55.05fe04
RT Journal T1
Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.55.05fe04&Exemplar=1&LAN=DE A1 Ikenaga, Kazutada A1 Mishima, Akira A1 Yano, Yoshiki A1 Tabuchi, Toshiya A1 Matsumoto, Koh PB IOP Publishing YR 2016 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 55 IS 5S SP 05FE04 LK http://dx.doi.org/https://doi.org/10.7567/jjap.55.05fe04 DO https://doi.org/10.7567/jjap.55.05fe04 SF ELIB - SuUB Bremen
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