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1 Ergebnisse
1
AlGaN/GaN high electron mobility transistors with intention..:
Bergsten, Johan
;
Li, Xun
;
Nilsson, Daniel
...
Japanese Journal of Applied Physics. 55 (2016) 5S - p. 05FK02 , 2016
Link:
https://doi.org/10.7567/jjap.55.05fk02
RT Journal T1
AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.55.05fk02&Exemplar=1&LAN=DE A1 Bergsten, Johan A1 Li, Xun A1 Nilsson, Daniel A1 Danielsson, Örjan A1 Pedersen, Henrik A1 Janzén, Erik A1 Forsberg, Urban A1 Rorsman, Niklas PB IOP Publishing YR 2016 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 55 IS 5S SP 05FK02 LK http://dx.doi.org/https://doi.org/10.7567/jjap.55.05fk02 DO https://doi.org/10.7567/jjap.55.05fk02 SF ELIB - SuUB Bremen
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