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1 Ergebnisse
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Mg-compensation effect in GaN buffer layer for AlGaN/GaN hi..:
Ko, Kwangse
;
Lee, Kyeongjae
;
So, Byeongchan
...
Japanese Journal of Applied Physics. 56 (2016) 1 - p. 015502 , 2016
Link:
https://doi.org/10.7567/jjap.56.015502
RT Journal T1
Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.56.015502&Exemplar=1&LAN=DE A1 Ko, Kwangse A1 Lee, Kyeongjae A1 So, Byeongchan A1 Heo, Cheon A1 Lee, Kyungbae A1 Kwak, Taemyung A1 Han, Sang-Woo A1 Cha, Ho-Young A1 Nam, Okhyun PB IOP Publishing YR 2016 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 56 IS 1 SP 015502 LK http://dx.doi.org/https://doi.org/10.7567/jjap.56.015502 DO https://doi.org/10.7567/jjap.56.015502 SF ELIB - SuUB Bremen
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