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1 Ergebnisse
1
Growth of low-threading-dislocation-density GaN on graphene..:
He, Shunyu
;
Xu, Yu
;
Qi, Lin
...
Japanese Journal of Applied Physics. 56 (2017) 3 - p. 030308 , 2017
Link:
https://doi.org/10.7567/jjap.56.030308
RT Journal T1
Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.56.030308&Exemplar=1&LAN=DE A1 He, Shunyu A1 Xu, Yu A1 Qi, Lin A1 Li, Zongyao A1 Cao, Bing A1 Wang, Chinhua A1 Zhang, Jicai A1 Wang, Jianfeng A1 Xu, Ke PB IOP Publishing YR 2017 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 56 IS 3 SP 030308 LK http://dx.doi.org/https://doi.org/10.7567/jjap.56.030308 DO https://doi.org/10.7567/jjap.56.030308 SF ELIB - SuUB Bremen
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