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1 Ergebnisse
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SiCOH-based resistive random access memory for backend of l..:
Zheng, Liang
;
Dai, Ya-Wei
;
Yu, Lin-Jie
...
Japanese Journal of Applied Physics. 56 (2017) 4S - p. 04CE10 , 2017
Link:
https://doi.org/10.7567/jjap.56.04ce10
RT Journal T1 <Title>SiCOH-based resistive random access memory for backend of line compatible nonvolatile memory application</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.56.04ce10&Exemplar=1&LAN=DE A1 Zheng, Liang A1 Dai, Ya-Wei A1 Yu, Lin-Jie A1 Chen, Lin A1 Sun, Qing-Qing A1 Zhang, David Wei PB IOP Publishing YR 2017 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 56 IS 4S SP 04CE10 LK http://dx.doi.org/https://doi.org/10.7567/jjap.56.04ce10 DO https://doi.org/10.7567/jjap.56.04ce10 SF ELIB - SuUB Bremen
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