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1 Ergebnisse
1
Sidewall electrode TiO x /TiO x N yresistive random access ..:
Lai, Erh-Kun
;
Lee, Dai-Ying
;
Wu, Jau-Yi
...
Japanese Journal of Applied Physics. 56 (2017) 4S - p. 04CE11 , 2017
Link:
https://doi.org/10.7567/jjap.56.04ce11
RT Journal T1 <Title>Sidewall electrode TiO x /TiO x N yresistive random access memory with excellent memory window control and reliability using plasma oxidation and a novel degradation-detecting writing algorithm</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.56.04ce11&Exemplar=1&LAN=DE A1 Lai, Erh-Kun A1 Lee, Dai-Ying A1 Wu, Jau-Yi A1 Lee, Ming-Hsiu A1 Khwa, Win-San A1 Lin, Yu-Hsuan A1 Chen, Wei-Chen A1 Chiang, Kuang-Hao A1 Horng, Sheng-Fu A1 Gong, Jeng A1 Lung, Hsiang-Lan A1 Hsieh, Kuang-Yeu A1 Lu, Chih-Yuan PB IOP Publishing YR 2017 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 56 IS 4S SP 04CE11 LK http://dx.doi.org/https://doi.org/10.7567/jjap.56.04ce11 DO https://doi.org/10.7567/jjap.56.04ce11 SF ELIB - SuUB Bremen
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