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Study on the effects of the Si capping layer growth conditi..:
Okumura, Shigekazu
;
Kinoshita, Keizo
;
Fujikata, Junichi
...
Japanese Journal of Applied Physics. 56 (2017) 10 - p. 102201 , 2017
Link:
https://doi.org/10.7567/jjap.56.102201
RT Journal T1
Study on the effects of the Si capping layer growth conditions on the leakage current of Ge photodetector
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.56.102201&Exemplar=1&LAN=DE A1 Okumura, Shigekazu A1 Kinoshita, Keizo A1 Fujikata, Junichi A1 Simoyama, Takasi A1 Ono, Hideki A1 Tanaka, Yu A1 Morito, Ken A1 Horikawa, Tsuyoshi A1 Mogami, Tohru PB IOP Publishing YR 2017 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 56 IS 10 SP 102201 LK http://dx.doi.org/https://doi.org/10.7567/jjap.56.102201 DO https://doi.org/10.7567/jjap.56.102201 SF ELIB - SuUB Bremen
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