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1 Ergebnisse
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Leakage current reduction of vertical GaN junction barrier ..:
Hayashida, Tetsuro
;
Nanjo, Takuma
;
Furukawa, Akihiko
..
Japanese Journal of Applied Physics. 57 (2018) 4 - p. 040302 , 2018
Link:
https://doi.org/10.7567/jjap.57.040302
RT Journal T1
Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.57.040302&Exemplar=1&LAN=DE A1 Hayashida, Tetsuro A1 Nanjo, Takuma A1 Furukawa, Akihiko A1 Watahiki, Tatsuro A1 Yamamuka, Mikio PB IOP Publishing YR 2018 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 57 IS 4 SP 040302 LK http://dx.doi.org/https://doi.org/10.7567/jjap.57.040302 DO https://doi.org/10.7567/jjap.57.040302 SF ELIB - SuUB Bremen
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