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1 Ergebnisse
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Curvature evolution of 200 mm diameter GaN-on-insulator waf..:
Zhang, Li
;
Lee, Kwang Hong
;
Kadir, Abdul
...
Japanese Journal of Applied Physics. 57 (2018) 5 - p. 051002 , 2018
Link:
https://doi.org/10.7567/jjap.57.051002
RT Journal T1
Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.57.051002&Exemplar=1&LAN=DE A1 Zhang, Li A1 Lee, Kwang Hong A1 Kadir, Abdul A1 Wang, Yue A1 Lee, Kenneth E. A1 Tan, Chuan Seng A1 Chua, Soo Jin A1 Fitzgerald, Eugene A. PB IOP Publishing YR 2018 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 57 IS 5 SP 051002 LK http://dx.doi.org/https://doi.org/10.7567/jjap.57.051002 DO https://doi.org/10.7567/jjap.57.051002 SF ELIB - SuUB Bremen
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