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1 Ergebnisse
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Subthreshold characteristics analysis and modeling of fully..:
Ke, Dao-ming
;
Wu, Di
;
Meng, Jian
...
Japanese Journal of Applied Physics. 57 (2018) 9 - p. 094201 , 2018
Link:
https://doi.org/10.7567/jjap.57.094201
RT Journal T1 <Title>Subthreshold characteristics analysis and modeling of fully depleted silicon-on-insulator MOSFETs with high-k SiO2 stacked gate structure</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.57.094201&Exemplar=1&LAN=DE A1 Ke, Dao-ming A1 Wu, Di A1 Meng, Jian A1 Yang, Fei A1 Wan, Lu-xu A1 Yang, Jian-guo A1 Chang, Hong PB IOP Publishing YR 2018 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 57 IS 9 SP 094201 LK http://dx.doi.org/https://doi.org/10.7567/jjap.57.094201 DO https://doi.org/10.7567/jjap.57.094201 SF ELIB - SuUB Bremen
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