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1 Ergebnisse
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Ferroelectric properties of undoped HfO2 directly deposited..:
Kim, Min Gee
;
Ohmi, Shun-ichiro
Japanese Journal of Applied Physics. 57 (2018) 11S - p. 11UF09 , 2018
Link:
https://doi.org/10.7567/jjap.57.11uf09
RT Journal T1 <Title>Ferroelectric properties of undoped HfO2 directly deposited on Si substrates by RF magnetron sputtering</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjap.57.11uf09&Exemplar=1&LAN=DE A1 Kim, Min Gee A1 Ohmi, Shun-ichiro PB IOP Publishing YR 2018 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 57 IS 11S SP 11UF09 LK http://dx.doi.org/https://doi.org/10.7567/jjap.57.11uf09 DO https://doi.org/10.7567/jjap.57.11uf09 SF ELIB - SuUB Bremen
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