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High Speed MoSi2-Gate CMOS/SOS Devices:
Mizutani, Yoshihisa
;
Maeguchi, Kenji
;
Mochizuki, Tohru
...
Japanese Journal of Applied Physics. 20 (1981) S1 - p. 117 , 1981
Link:
https://doi.org/10.7567/jjaps.20s1.117
RT Journal T1 <Title>High Speed MoSi2-Gate CMOS/SOS Devices</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_jjaps.20s1.117&Exemplar=1&LAN=DE A1 Mizutani, Yoshihisa A1 Maeguchi, Kenji A1 Mochizuki, Tohru A1 Kimura, Minoru A1 Isobe, Mitsuo A1 Uchida, Yukimasa A1 Tango, Hiroyuki PB IOP Publishing YR 1981 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 20 IS S1 SP 117 LK http://dx.doi.org/https://doi.org/10.7567/jjaps.20s1.117 DO https://doi.org/10.7567/jjaps.20s1.117 SF ELIB - SuUB Bremen
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