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Gettering and defect engineering in semiconductor technolog..
Solid state phenomena, v. 178-179
Jantsch, W
;
Schläffer, F
, 2011
Link:
https://search.ebscohost.com/login.aspx?direct=true&sc..
RT T1
Gettering and defect engineering in semiconductor technology XIV: selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor [Technology], (GADEST2011) September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria
UL https://suche.suub.uni-bremen.de/peid=ebsco-553229&Exemplar=1&LAN=DE A1 Jantsch, W A1 Schläffer, F PB Trans Tech YR 2011 NO xii, 520 T3 Solid state phenomena, v. 178-179 SN 9783038135159 SN 3038135151 SN 9783037852323 SN 3037852321 K1 Semiconductors K1 Getters K1 Silicon crystals K1 Electrical engineering K1 Semi-conducteurs K1 Silicium cristallisé K1 Génie électrique K1 TECHNOLOGY & ENGINEERING K1 Defects K1 Materials K1 Défauts K1 Matériaux K1 Electronics K1 Solid State LK http://dx.doi.org/https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=553229 DO https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=553229 SF ELIB - SuUB Bremen
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