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1 Ergebnisse
1
FDSOI for cryoCMOS electronics: device characterization tow..:
, In:
2022 International Electron Devices Meeting (IEDM)
,
Casse, M.
;
Paz, B. Cardoso
;
Bergamaschi, F.
... - p. 34.6.1-34.6.4 , 2022
Link:
https://doi.org/10.1109/IEDM45625.2022.10019322
RT T1 <cTitle>2022 International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>FDSOI for cryoCMOS electronics: device characterization towards compact model</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10019322&Exemplar=1&LAN=DE A1 Casse, M. A1 Paz, B. Cardoso A1 Bergamaschi, F. A1 Ghibaudo, G. A1 Serra, F. A1 Billiot, G. A1 Jansen, A. G. M. A1 Berlingard, Q. A1 Martinie, S. A1 Bedecarrats, T. A1 Contamin, L. A1 Juge, A. A1 Vincent, E. A1 Galy, P. A1 Pavanello, M.A A1 Vinet, M. A1 Meunier, T. A1 Gaillard, F. YR 2022 SN 2156-017X K1 Analytical models K1 Mobility models K1 Silicon-on-insulator K1 Cryogenics K1 Tail K1 Logic gates K1 Thermal conductivity SP 34.6.1 OP 34.6.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM45625.2022.10019322 DO https://doi.org/10.1109/IEDM45625.2022.10019322 SF ELIB - SuUB Bremen
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