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A > 64 Multiple States and > 210 TOPS/W High Efficient Comp..:

, In: 2022 International Electron Devices Meeting (IEDM),

Chen, M.-C. ; Ohshita, S. ; Amano, S.... - p. 18.2.1-18.2.4 , 2022

Link: https://doi.org/10.1109/IEDM45625.2022.10019324

RT 
T1 <cTitle>2022 International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>A > 64 Multiple States and > 210 TOPS/W High Efficient Computing by Monolithic Si/CAAC-IGZO + Super-Lattice ZrO2/Al2 O3/ZrO2 for Ultra-Low Power Edge AI Application</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10019324&Exemplar=1&LAN=DE
				
A1 Chen, M.-C.
A1 Ohshita, S.
A1 Amano, S.
A1 Kurokawa, Y.
A1 Watanabe, S.
A1 Imoto, Y.
A1 Ando, Y.
A1 Hsieh, W.-H.
A1 Chang, C.-H.
A1 Wu, C.-C.
A1 Chuang, S.-S.
A1 Yoshida, H.
A1 Lu, M.-C.
A1 Liao, M.-H.
A1 Chang, S.-Z.
A1 Yamazaki, S.
YR 2022
SN 2156-017X
K1 Temperature measurement
K1 Semiconductor device measurement
K1 Three-dimensional displays
K1 Microprocessors
K1 Capacitors
K1 Computer architecture
K1 Capacitance
K1 CAAC-IGZO
K1 analog in-memory computing
K1 high efficient
K1 low power
K1 monolithic 3D integration
SP 18.2.1
OP 18.2.4
LK http://dx.doi.org/https://doi.org/10.1109/IEDM45625.2022.10019324
DO https://doi.org/10.1109/IEDM45625.2022.10019324
SF ELIB - SuUB Bremen

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