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1 Ergebnisse
1
A > 64 Multiple States and > 210 TOPS/W High Efficient Comp..:
, In:
2022 International Electron Devices Meeting (IEDM)
,
Chen, M.-C.
;
Ohshita, S.
;
Amano, S.
... - p. 18.2.1-18.2.4 , 2022
Link:
https://doi.org/10.1109/IEDM45625.2022.10019324
RT T1
2022 International Electron Devices Meeting (IEDM)
: T1
A > 64 Multiple States and > 210 TOPS/W High Efficient Computing by Monolithic Si/CAAC-IGZO + Super-Lattice ZrO2/Al2 O3/ZrO2 for Ultra-Low Power Edge AI Application
UL https://suche.suub.uni-bremen.de/peid=ieee-10019324&Exemplar=1&LAN=DE A1 Chen, M.-C. A1 Ohshita, S. A1 Amano, S. A1 Kurokawa, Y. A1 Watanabe, S. A1 Imoto, Y. A1 Ando, Y. A1 Hsieh, W.-H. A1 Chang, C.-H. A1 Wu, C.-C. A1 Chuang, S.-S. A1 Yoshida, H. A1 Lu, M.-C. A1 Liao, M.-H. A1 Chang, S.-Z. A1 Yamazaki, S. YR 2022 SN 2156-017X K1 Temperature measurement K1 Semiconductor device measurement K1 Three-dimensional displays K1 Microprocessors K1 Capacitors K1 Computer architecture K1 Capacitance K1 CAAC-IGZO K1 analog in-memory computing K1 high efficient K1 low power K1 monolithic 3D integration SP 18.2.1 OP 18.2.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM45625.2022.10019324 DO https://doi.org/10.1109/IEDM45625.2022.10019324 SF ELIB - SuUB Bremen
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