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1 Ergebnisse
1
Highly reliable STT-MRAM adopting advanced MTJs with contro..:
, In:
2022 International Electron Devices Meeting (IEDM)
,
Park, J.-H.
;
Kim, J. H.
;
Kim, J. M.
... - p. 10.6.1-10.6.4 , 2022
Link:
https://doi.org/10.1109/IEDM45625.2022.10019352
RT T1 <cTitle>2022 International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Highly reliable STT-MRAM adopting advanced MTJs with controlled domain wall pinning</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10019352&Exemplar=1&LAN=DE A1 Park, J.-H. A1 Kim, J. H. A1 Kim, J. M. A1 Kim, J. A1 Apalkov, D. A1 Okada, A. A1 Sato, H. A1 Jeong, J. H. A1 Cho, Y. J. A1 Pi, U. A1 Kim, Y. A1 Park, Y. S. A1 Song, K. M. A1 Kim, K. A1 Jeong, D.-E. A1 Kim, D. S. A1 Kim, C. A1 Kim, I. A1 Han, S. H. A1 Lee, K. A1 Lee, J. H. A1 Song, Y. J. A1 Koh, G. H. A1 Kuh, B. J. A1 Lee, J. M. A1 Song, J. H. YR 2022 SN 2156-017X K1 Correlation K1 Error analysis K1 Writing K1 Reliability K1 Electron devices SP 10.6.1 OP 10.6.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM45625.2022.10019352 DO https://doi.org/10.1109/IEDM45625.2022.10019352 SF ELIB - SuUB Bremen
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