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Highly-Scaled Self-Aligned GaN Complementary Technology on ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Xie, Qingyun ; Yuan, Mengyang ; Niroula, John... - p. 35.3.1-35.3.4 , 2022
Link: https://doi.org/10.1109/IEDM45625.2022.10019401