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1 Ergebnisse
1
415/610GHz fT/fMAX SiGe HBTs Integrated in a 45nm PDSOI BiC..:
, In:
2022 International Electron Devices Meeting (IEDM)
,
Jain, Vibhor
;
Pekarik, John
;
Kenney, Crystal
... - p. 11.6.1-11.6.4 , 2022
Link:
https://doi.org/10.1109/IEDM45625.2022.10019417
RT T1 <cTitle>2022 International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>415/610GHz fT/fMAX SiGe HBTs Integrated in a 45nm PDSOI BiCMOS process</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10019417&Exemplar=1&LAN=DE A1 Jain, Vibhor A1 Pekarik, John A1 Kenney, Crystal A1 Holt, Judson A1 Durcan, Chris A1 Johnson, Jeffrey B. A1 Saroop, Sudesh A1 Nafari, Mona A1 Ruparelia, Vaibhav A1 Gedela, Santosh Kumar A1 Sharma, Prateek Kumar A1 Ontalus, Viorel A1 Khokale, Shweta A1 Chaurasia, Saloni A1 Vanukuru, Venkata A1 Joseph, Alvin YR 2022 SN 2156-017X K1 Radio frequency K1 Performance evaluation K1 Field effect transistors K1 Silicon-on-insulator K1 Bandwidth K1 BiCMOS integrated circuits K1 Transmission line measurements SP 11.6.1 OP 11.6.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM45625.2022.10019417 DO https://doi.org/10.1109/IEDM45625.2022.10019417 SF ELIB - SuUB Bremen
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