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Semi-damascene Integration of a 2-layer MOL VHV Scaling Boo..:

, In: 2022 International Electron Devices Meeting (IEDM),

Vega-Gonzalez, V. ; Radisic, D. ; Choudhury, S.... - p. 23.2.1-23.2.4 , 2022

Link: https://doi.org/10.1109/IEDM45625.2022.10019483

RT 
T1 <cTitle>2022 International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Semi-damascene Integration of a 2-layer MOL VHV Scaling Booster to Enable 4-track Standard Cells</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10019483&Exemplar=1&LAN=DE
				
A1 Vega-Gonzalez, V.
A1 Radisic, D.
A1 Choudhury, S.
A1 Tierno, D.
A1 Thiam, A.
A1 Batuk, D.
A1 Martinez, G.T.
A1 Seidel, F.
A1 Decoster, S.
A1 Kundu, S.
A1 Tsvetanova, D.
A1 Peter, A.
A1 De Coster, H.
A1 Sepulveda-Marquez, A.
A1 Altamirano-Sanchez, E.
A1 Chan, Bt
A1 Drissi, Y.
A1 Sherazi, Y.
A1 Uk-Lee, J.
A1 Ciofi, I.
A1 Murdoch, G.
A1 Nagesh, N.
A1 Hellings, G.
A1 Ryckaert, J.
A1 Biesemans, S.
A1 Litta, E. Dentoni
A1 Horiguchi, N.
A1 Park, S.
A1 Tokei, Zs.
YR 2022
SN 2156-017X
K1 Resistance
K1 Symmetric matrices
K1 Microprocessors
K1 Computer architecture
K1 Tin
K1 Logic gates
K1 Routing
SP 23.2.1
OP 23.2.4
LK http://dx.doi.org/https://doi.org/10.1109/IEDM45625.2022.10019483
DO https://doi.org/10.1109/IEDM45625.2022.10019483
SF ELIB - SuUB Bremen

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