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1 Ergebnisse
1
First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel ..:
, In:
2022 International Electron Devices Meeting (IEDM)
,
Lu, Wendong
;
Zhu, Zhengyong
;
Chen, Kaifei
... - p. 26.4.1-26.4.4 , 2022
Link:
https://doi.org/10.1109/IEDM45625.2022.10019488
RT T1 <cTitle>2022 International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, ION=1500 μA/μm@VDS=1V and Retention Time>300s</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10019488&Exemplar=1&LAN=DE A1 Lu, Wendong A1 Zhu, Zhengyong A1 Chen, Kaifei A1 Liu, Menggan A1 Kang, Bok-Moon A1 Duan, Xinlv A1 Niu, Jiebin A1 Liao, Fuxi A1 Dan, Wang A1 Wu, Xie-Shuai A1 Son, Joohwan A1 Xiao, De-Yuan A1 Wang, Gui-Lei A1 Yoo, Abraham A1 Cao, Kan-Yu A1 Geng, Di A1 Lu, Nianduan A1 Yang, Guanhua A1 Zhao, Chao A1 Li, Ling A1 Liu, Ming YR 2022 SN 2156-017X K1 Performance evaluation K1 Field effect transistors K1 Random access memory K1 Modulation K1 Logic gates K1 Reliability engineering K1 Market research SP 26.4.1 OP 26.4.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM45625.2022.10019488 DO https://doi.org/10.1109/IEDM45625.2022.10019488 SF ELIB - SuUB Bremen
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