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Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3..:

, In: 2022 International Electron Devices Meeting (IEDM),
Zhang, Z. ; Lin, Z. ; Charnas, A.... - p. 30.3.1-30.3.4 , 2022
Link: https://doi.org/10.1109/IEDM45625.2022.10019494