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1 Ergebnisse
1
Forksheet FETs with Bottom Dielectric Isolation, Self-Align..:
, In:
2022 International Electron Devices Meeting (IEDM)
,
Mertens, H.
;
Ritzenthaler, R.
;
Oniki, Y.
... - p. 23.1.1-23.1.4 , 2022
Link:
https://doi.org/10.1109/IEDM45625.2022.10019497
RT T1 <cTitle>2022 International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10019497&Exemplar=1&LAN=DE A1 Mertens, H. A1 Ritzenthaler, R. A1 Oniki, Y. A1 Gowda, P. Puttarame A1 Mannaert, G. A1 Sebaai, F. A1 Hikavyy, A. A1 Rosseel, E. A1 Dupuy, E. A1 Peter, A. A1 Vandersmissen, K. A1 Radisic, D. A1 Briggs, B. A1 Batuk, D. A1 Geypen, J. A1 Martinez-Alanis, G. A1 Seidel, F. A1 Richard, O. A1 Chan, B.T. A1 Mitard, J. A1 Litta, E. Dentoni A1 Horiguchi, N. YR 2022 SN 2156-017X K1 Voltage measurement K1 Current measurement K1 Metals K1 Logic gates K1 Silicon K1 Dielectric measurement K1 Dielectrics SP 23.1.1 OP 23.1.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM45625.2022.10019497 DO https://doi.org/10.1109/IEDM45625.2022.10019497 SF ELIB - SuUB Bremen
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