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A 3nm CMOS FinFlex™ Platform Technology with Enhanced Power..:

, In: 2022 International Electron Devices Meeting (IEDM),

Wu, Shien-Yang ; Chang, C.H. ; Chiang, M.C.... - p. 27.5.1-27.5.4 , 2022

Link: https://doi.org/10.1109/IEDM45625.2022.10019498

RT 
T1 <cTitle>2022 International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>A 3nm CMOS FinFlex™ Platform Technology with Enhanced Power Efficiency and Performance for Mobile SoC and High Performance Computing Applications</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10019498&Exemplar=1&LAN=DE
				
A1 Wu, Shien-Yang
A1 Chang, C.H.
A1 Chiang, M.C.
A1 Lin, C.Y.
A1 Liaw, J.J.
A1 Cheng, J.Y.
A1 Yeh, J.Y.
A1 Chen, H.F.
A1 Chang, S.Y.
A1 Lai, K.T.
A1 Liang, M.S.
A1 Pan, K.H.
A1 Chen, J.H.
A1 Chang, V.S.
A1 Luo, T.C.
A1 Wang, X.
A1 Mor, Y.S.
A1 Lin, C.I.
A1 Wang, S.H.
A1 Hsieh, M.Y.
A1 Chen, C.Y.
A1 Wu, B.F.
A1 Lin, C.J.
A1 Liang, C.S.
A1 Tsao, C.P.
A1 Li, C.T.
A1 Chen, C.H.
A1 Hsieh, C.H.
A1 Liu, H.H.
A1 Chen, P.N.
A1 Chen, C.C.
A1 Chen, R.
A1 Yeo, Y.C.
A1 Chui, C.O.
A1 Chang, W.
A1 Lee, T.L.
A1 Huang, K.B.
A1 Lin, H.J.
A1 Chen, K.W.
A1 Tsai, M.H.
A1 Chen, K.S.
A1 Chen, X.M.
A1 Cheng, Y.K.
A1 Wang, C.H.
A1 Shue, W.
A1 Ku, Y.
A1 Jang, S. M.
A1 Cao, M.
A1 Lu, L.C.
A1 Chang, T.S.
YR 2022
SN 2156-017X
K1 Performance evaluation
K1 Industries
K1 Technological innovation
K1 5G mobile communication
K1 Metals
K1 Random access memory
K1 FinFETs
SP 27.5.1
OP 27.5.4
LK http://dx.doi.org/https://doi.org/10.1109/IEDM45625.2022.10019498
DO https://doi.org/10.1109/IEDM45625.2022.10019498
SF ELIB - SuUB Bremen

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