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1 Ergebnisse
1
A c-axis aligned crystalline IGZO FET and a 0.06-μm2 HfO2-b..:
, In:
2022 International Electron Devices Meeting (IEDM)
,
Endo, M.
;
Numata, S.
;
Ohshima, K.
... - p. 6.6.1-6.6.4 , 2022
Link:
https://doi.org/10.1109/IEDM45625.2022.10019506
RT T1
2022 International Electron Devices Meeting (IEDM)
: T1
A c-axis aligned crystalline IGZO FET and a 0.06-μm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time
UL https://suche.suub.uni-bremen.de/peid=ieee-10019506&Exemplar=1&LAN=DE A1 Endo, M. A1 Numata, S. A1 Ohshima, K. A1 Egi, Y. A1 Isaka, F. A1 Ohno, T. A1 Tezuka, S. A1 Hamada, T. A1 Furutani, K. A1 Tsuda, K. A1 Matsuzaki, T. A1 Onuki, T. A1 Murakawa, T. A1 Kunitake, H. A1 Kobayashi, M. A1 Yamazaki, S. YR 2022 SN 2156-017X K1 Voltage measurement K1 Nonvolatile memory K1 Ferroelectric films K1 Capacitors K1 Field effect transistors K1 Random access memory K1 Size measurement SP 6.6.1 OP 6.6.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM45625.2022.10019506 DO https://doi.org/10.1109/IEDM45625.2022.10019506 SF ELIB - SuUB Bremen
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