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Integration Design and Process of 3-D Heterogeneous 6T SRAM..:

, In: 2022 International Electron Devices Meeting (IEDM),

Yu, X.-R. ; Chuang, M.-H. ; Chang, S.-W.... - p. 20.5.1-20.5.4 , 2022

Link: https://doi.org/10.1109/IEDM45625.2022.10019507

RT 
T1 <cTitle>2022 International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10019507&Exemplar=1&LAN=DE
				
A1 Yu, X.-R.
A1 Chuang, M.-H.
A1 Chang, S.-W.
A1 Chang, W.-H.
A1 Hong, T.-C.
A1 Chiang, C.-H.
A1 Lu, W.-H.
A1 Yang, C.-Y.
A1 Chen, W.-J.
A1 Lin, J.-H.
A1 Wu, P.-H.
A1 Sun, T.-C.
A1 Kola, S.
A1 Yang, Y.-S.
A1 Da, Yun
A1 Sung, P.-J.
A1 Wu, C.-T.
A1 Cho, T.-C.
A1 Luo, G.-L.
A1 Kao, K.-H.
A1 Chiang, M.-H.
A1 Ma, W. C.-Y.
A1 Su, C.-J.
A1 Chao, T.-S.
A1 Maeda, T.
A1 Samukawa, S.
A1 Li, Y.
A1 Lee, Y.-J.
A1 Wu, W.-F.
A1 Tarng, J.-H.
A1 Wang, Y.-H.
YR 2022
SN 2156-017X
K1 Wafer bonding
K1 Surface cleaning
K1 Three-dimensional displays
K1 Microprocessors
K1 Stacking
K1 Random access memory
K1 Computer architecture
SP 20.5.1
OP 20.5.4
LK http://dx.doi.org/https://doi.org/10.1109/IEDM45625.2022.10019507
DO https://doi.org/10.1109/IEDM45625.2022.10019507
SF ELIB - SuUB Bremen

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