I agree that this site is using cookies. You can find further informations here.
X
Merkliste 
 1 Ergebnisse 
 
1

Gate length scaling beyond Si: Mono-layer 2D Channel FETs R..:

, In: 2022 International Electron Devices Meeting (IEDM),
Dorow, C. J. ; Penumatcha, A. ; Kitamura, A.... - p. 7.5.1-7.5.4 , 2022
Link: https://doi.org/10.1109/IEDM45625.2022.10019524