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1 Ergebnisse
1
First Demonstration of Monolithic 3D Self-aligned GeSi Chan..:
, In:
2022 International Electron Devices Meeting (IEDM)
,
Tu, Chien-Te
;
Liu, Yi-Chun
;
Huang, Bo-Wei
... - p. 20.3.1-20.3.4 , 2022
Link:
https://doi.org/10.1109/IEDM45625.2022.10019532
RT T1
2022 International Electron Devices Meeting (IEDM)
: T1
First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation
UL https://suche.suub.uni-bremen.de/peid=ieee-10019532&Exemplar=1&LAN=DE A1 Tu, Chien-Te A1 Liu, Yi-Chun A1 Huang, Bo-Wei A1 Chen, Yu-Rui A1 Hsieh, Wan-Hsuan A1 Tsai, Chung-En A1 Chueh, Shee-Jier A1 Cheng, Chun-Yi A1 Ma, Yichen A1 Liu, C. W. YR 2022 SN 2156-017X K1 Three-dimensional displays K1 X-ray scattering K1 Field effect transistors K1 Logic gates K1 Germanium K1 Inverters K1 Threshold voltage SP 20.3.1 OP 20.3.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM45625.2022.10019532 DO https://doi.org/10.1109/IEDM45625.2022.10019532 SF ELIB - SuUB Bremen
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