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III-V/III-N technologies for next generation high-capacity ..:

, In: 2022 International Electron Devices Meeting (IEDM),

Collaert, N. ; Alian, A. ; Banerjee, A.... - p. 11.5.1-11.5.4 , 2022

Link: https://doi.org/10.1109/IEDM45625.2022.10019555

RT 
T1 <cTitle>2022 International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>III-V/III-N technologies for next generation high-capacity wireless communication</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10019555&Exemplar=1&LAN=DE
				
A1 Collaert, N.
A1 Alian, A.
A1 Banerjee, A.
A1 Boccardi, G.
A1 Cardinael, P.
A1 Chauhan, V.
A1 Desset, C.
A1 ElKashlan, R.
A1 Khaled, A.
A1 Ingels, M.
A1 Kunert, B.
A1 Mols, Y.
A1 O'Sullivan, B.
A1 Peralagu, U.
A1 Pinho, N.
A1 Rodriguez, R.
A1 Sibaja-Hernandez, A.
A1 Sinha, S.
A1 Sun, X.
A1 Vais, A.
A1 Vermeersch, B.
A1 Yadav, S.
A1 Yan, D.
A1 Yu, H.
A1 Zhang, Y.
A1 Zhao, M.
A1 Van Driessche, J.
A1 Gramegna, G.
A1 Wambacq, P.
A1 Parvais, B.
A1 Peeters, M.
YR 2022
SN 2156-017X
K1 Wireless communication
K1 6G mobile communication
K1 Three-dimensional displays
K1 5G mobile communication
K1 Silicon
K1 III-V semiconductor materials
K1 Electron devices
SP 11.5.1
OP 11.5.4
LK http://dx.doi.org/https://doi.org/10.1109/IEDM45625.2022.10019555
DO https://doi.org/10.1109/IEDM45625.2022.10019555
SF ELIB - SuUB Bremen

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