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1 Ergebnisse
1
New Phase-Change Materials by Atomic-Level Engineering the ..:
, In:
2022 International Electron Devices Meeting (IEDM)
,
Cheng, H. Y.
;
Grun, A.
;
Chien, W C.
... - p. 18.5.1-18.5.4 , 2022
Link:
https://doi.org/10.1109/IEDM45625.2022.10019562
RT T1 <cTitle>2022 International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10019562&Exemplar=1&LAN=DE A1 Cheng, H. Y. A1 Grun, A. A1 Chien, W C. A1 Yeh, C. W. A1 Ray, A. A1 Cheng, C. W. A1 Lai, E. K. A1 Lavoie, C. A1 Gignac, L. A1 Hopstaken, M. A1 Kuo, I. T. A1 Hsu, C. S. A1 Buzi, L. A1 Bruce, R. L. A1 Lee, D. Y. A1 Gong, N. A1 Bishop, D. A1 BrightSky, M. A1 Lung, H. L. YR 2022 SN 2156-017X K1 Phase change materials K1 Resistance K1 Grain size K1 Three-dimensional displays K1 Switches K1 Tail K1 Doping SP 18.5.1 OP 18.5.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM45625.2022.10019562 DO https://doi.org/10.1109/IEDM45625.2022.10019562 SF ELIB - SuUB Bremen
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