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Critical Process Features Enabling Aggressive Contacted Gat..:

, In: 2022 International Electron Devices Meeting (IEDM),

Chang, Chih-Hao ; Chang, V.S. ; Pan, K.H.... - p. 27.1.1-27.1.4 , 2022

Link: https://doi.org/10.1109/IEDM45625.2022.10019565

RT 
T1 <cTitle>2022 International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Critical Process Features Enabling Aggressive Contacted Gate Pitch Scaling for 3nm CMOS Technology and Beyond</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10019565&Exemplar=1&LAN=DE
				
A1 Chang, Chih-Hao
A1 Chang, V.S.
A1 Pan, K.H.
A1 Lai, K.T.
A1 Lu, J. H.
A1 Ng, J.A.
A1 Chen, C.Y.
A1 Wu, B.F.
A1 Lin, C.J.
A1 Liang, C.S.
A1 Tsao, C.P.
A1 Mor, Y.S.
A1 Li, C.T.
A1 Lin, T.C.
A1 Hsieh, C.H.
A1 Chen, P.N.
A1 Hsu, H.H.
A1 Chen, J.H.
A1 Chen, H.F.
A1 Yeh, J.Y.
A1 Chiang, M.C.
A1 Lin, C.Y.
A1 Liaw, J.J.
A1 Wang, C.H.
A1 Lee, S.B.
A1 Chen, C.C.
A1 Lin, H.J.
A1 Chen, R.
A1 Chen, K.W.
A1 Chui, C.O.
A1 Yeo, Y.C.
A1 Huang, K.B.
A1 Lee, T.L.
A1 Tsai, M.H.
A1 Chen, K.S.
A1 Lu, Y.C.
A1 Jang, S.M.
A1 Wu, S.-Y.
YR 2022
SN 2156-017X
K1 Technological innovation
K1 Process control
K1 Logic gates
K1 CMOS technology
K1 SRAM cells
K1 FinFETs
K1 Robustness
SP 27.1.1
OP 27.1.4
LK http://dx.doi.org/https://doi.org/10.1109/IEDM45625.2022.10019565
DO https://doi.org/10.1109/IEDM45625.2022.10019565
SF ELIB - SuUB Bremen

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