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Comparing the V-I Characteristics of CeO2 based Omega FinFE..:
, In:
2022 14th International Conference on Mathematics, Actuarial Science, Computer Science and Statistics (MACS)
,
Kumar, K.Sai
;
Tamizhselvan, C.
;
Hemavathy, O.R.
- p. 1-7 , 2022
Link:
https://doi.org/10.1109/MACS56771.2022.10022988
RT T1
2022 14th International Conference on Mathematics, Actuarial Science, Computer Science and Statistics (MACS)
: T1
Comparing the V-I Characteristics of CeO2 based Omega FinFET over Conventional SiO2 Material by Varying the Oxide Thickness
UL https://suche.suub.uni-bremen.de/peid=ieee-10022988&Exemplar=1&LAN=DE A1 Kumar, K.Sai A1 Tamizhselvan, C. A1 Hemavathy, O.R. YR 2022 K1 Silicon compounds K1 Computer science K1 Dielectric constant K1 Photonic band gap K1 Discrete Fourier transforms K1 Cerium K1 Logic gates K1 Novel Cerium Oxide (CeO2) K1 Silicon Dioxide (SiO2) K1 OMEGA FinFET K1 Thickness K1 Drain current K1 Band gap SP 1 OP 7 LK http://dx.doi.org/https://doi.org/10.1109/MACS56771.2022.10022988 DO https://doi.org/10.1109/MACS56771.2022.10022988 SF ELIB - SuUB Bremen
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