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Impurity states in gated graphene systems in a magnetic fie..:
, In:
International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022)
,
Avetisyan, A. A.
;
Djotyan, A. P.
- p. None , 2022
Link:
https://doi.org/10.1049/icp.2022.2794
RT T1
International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022)
: T1
Impurity states in gated graphene systems in a magnetic field
UL https://suche.suub.uni-bremen.de/peid=ieee-10025633&Exemplar=1&LAN=DE A1 Avetisyan, A. A. A1 Djotyan, A. P. YR 2022 K1 binding energy K1 energy gap K1 graphene K1 impurity states K1 monolayers K1 bilayer graphene K1 gated graphene systems K1 ground state energy K1 isolated impurity electron K1 magnetic field strength K1 monolayer graphene K1 perpendicular magnetic field K1 static electric field SP None LK http://dx.doi.org/https://doi.org/10.1049/icp.2022.2794 DO https://doi.org/10.1049/icp.2022.2794 SF ELIB - SuUB Bremen
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